Indium borate (B₂O₆In₂) is an inorganic ceramic semiconductor compound combining indium oxide with boric oxide components. This material is primarily investigated in research and development contexts for optoelectronic and photonic applications, where its wide bandgap and refractive properties make it relevant to transparent conductive devices, UV detectors, and emerging wide-bandgap semiconductor systems. While not yet widely commercialized compared to conventional semiconductors like gallium nitride or indium phosphide, indium borates represent an active area of exploration for next-generation transparent electronics and high-temperature semiconductor applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24,274.5 | ksi | — | ||
Shear Modulus(G) | 10,956.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.023 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.207 | eV/atom | — |