B2 Br6 is a boron-bromine compound semiconductor with a binary ionic crystal structure characteristic of intermetallic phases. This is a research-stage material primarily studied for its electronic and structural properties within the broader family of boron halide semiconductors. Interest in this compound centers on potential applications requiring wide bandgap semiconductors or specialized optical/electrical behavior, though commercial adoption remains limited compared to established semiconductor platforms like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,265 | ksi | — | ||
Shear Modulus(G) | 814.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.636 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4810 | eV/atom | — |