B2 Br2 Mg4 N4

semiconductor

· B2 Br2 Mg4 N4

B2Br2Mg4N4 is an experimental boron-magnesium nitride compound with mixed halide incorporation, belonging to the broader family of wide-bandgap semiconductors and nitride ceramics. This material remains largely in the research phase, with potential applications in high-temperature electronics and optoelectronics where its nitride backbone and magnesium content may offer thermal stability and electrical tunability. The compound represents ongoing exploration into complex multi-element nitride semiconductors for next-generation device applications where conventional binary nitrides (GaN, AlN) reach performance limits.

Research/experimental semiconductorsHigh-temperature electronicsWide-bandgap optoelectronicsThermal management componentsNext-generation power devicesMaterials screening for semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	77.09	GPa	—
Shear Modulus(G)	32.63	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.620	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.264	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B2 Br2 Mg4 N4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control