B₁₂O₂ is a boron oxide semiconductor compound belonging to the family of boron-rich ceramics and potential wide-bandgap semiconductors. This material is primarily of research interest rather than established commercial production, with potential applications in high-temperature electronics, UV detection, and advanced ceramic systems where boron oxide semiconductivity could provide advantages over traditional materials. The material represents an exploratory composition within boron oxide chemistry, investigated for its electronic properties and structural characteristics that may enable next-generation semiconductor or optoelectronic device platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,938.8 | ksi | — | ||
Shear Modulus(G) | 30,774.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.214 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7530 | eV/atom | — |