B11As

ceramic

· JVASP-125092· B11As

B11As is a boron arsenide ceramic compound combining boron and arsenic in a binary crystal structure. This material is primarily investigated in semiconductor and thermal management research contexts, where its wide bandgap and high thermal conductivity make it attractive for next-generation high-power electronics and extreme-temperature applications. Relative to conventional silicon carbide or gallium nitride, B11As represents an emerging platform for devices requiring combined electrical isolation, thermal performance, and radiation hardness.

High-temperature semiconductorsThermal management substratesWide-bandgap electronics researchRadiation-hardened devicesAdvanced power electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	3.190	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.4426	eV/atom	—
Formation Energy(ΔHf)	0.3437	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B11As

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental