B1 Ti1 is a titanium-based semiconductor compound, likely a binary titanium boride or intermetallic phase in the titanium-boron system. This material represents an emerging research compound rather than a widely commercialized engineering material; it is of interest in the semiconductor and advanced materials community for its potential electrical and thermal properties in high-temperature or specialized electronic applications. Researchers investigate such titanium-based semiconductors for niche roles where conventional semiconductors face thermal or chemical limitations, though industrial adoption remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,789.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | -411.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04630 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6270 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data