B1 Te2 As1

semiconductor

· B1 Te2 As1

B₁Te₂As₁ is a ternary semiconductor compound combining boron, tellurium, and arsenic—a relatively uncommon composition that sits at the intersection of chalcogenide and pnictide semiconductor families. This material is primarily of research and development interest rather than established high-volume production, with potential applications in optoelectronics and solid-state device engineering where the bandgap and thermal properties of mixed-anion semiconductors offer design flexibility not available in binary compounds.

experimental optoelectronicsinfrared detectorswide-bandgap semiconductorsthermoelectric researchhigh-temperature electronicsphotovoltaic device layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000600	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.134	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B1 Te2 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control