B1Sb1 is an intermetallic semiconductor compound composed of boron and antimony in a 1:1 stoichiometric ratio. This material belongs to the III-V semiconductor family and is primarily of research interest for its potential in optoelectronic and high-temperature semiconductor applications. While not widely commercialized compared to established semiconductors like GaAs or InSb, B1Sb1 is investigated for specialized use cases where its electronic band structure and thermal stability characteristics may offer advantages in extreme environment applications or novel device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 14,354 | ksi | — | ||
Shear Modulus(G) | 12,336.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9452 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3740 | eV/atom | — |