B1 P1 is a semiconductor material whose specific composition requires clarification, but it likely belongs to a boron-phosphide or similar III-V compound semiconductor family. This class of materials is valued in high-temperature electronics, optoelectronics, and power devices where wide bandgap semiconductors offer superior thermal stability and breakdown voltage compared to conventional silicon. The notable stiffness and elastic properties suggest potential applications in ruggedized or harsh-environment semiconductor devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,442.9 | ksi | — | ||
Shear Modulus(G) | 23,916.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.515 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4540 | eV/atom | — |