B1 Hf1 is a hafnium-based binary compound semiconductor, likely representing a hafnium boride or related intermetallic phase with potential for high-temperature electronics and materials research. This material belongs to the family of refractory compounds that retain semiconductor properties at elevated temperatures, making it of interest for extreme environment applications where traditional semiconductors degrade. Its notable stiffness and hardness characteristics position it as a candidate for specialized high-temperature device structures and thermoelectric applications, though it remains primarily in the research and development phase rather than established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 174.0 | GPa | — | ||
Shear Modulus(G) | 97.40 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01630 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4610 | eV/atom | — |