B1 As1

semiconductor

· B1 As1

B1As1 is a binary III-V semiconductor compound composed of boron and arsenic, representing an emerging material in the III-V semiconductor family. This compound is primarily of research and development interest, with potential applications in high-temperature and high-frequency optoelectronic devices where its wide bandgap and thermal stability could offer advantages over more conventional III-V materials like GaAs or InP.

wide-bandgap semiconductorshigh-temperature electronicshigh-frequency optoelectronicsresearch materialspower device developmentUV-visible light emission

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	133.4	GPa	—
Shear Modulus(G)	127.0	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.415	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.01500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control