AuInN3

metal

· AuInN3

AuInN3 is an intermetallic compound combining gold, indium, and nitrogen, representing an emerging material in the nitride compound family with potential semiconductor or functional alloy properties. This material is primarily of research interest rather than established in high-volume industrial production, with potential applications in optoelectronics, high-temperature electronics, or specialized semiconductor devices where the unique phase stability of gold-indium nitrides could offer advantages over conventional binary nitride systems. Engineers evaluating this compound should treat it as an experimental material requiring validation of manufacturing feasibility, property stability, and cost-effectiveness relative to mature alternatives like GaN or InN-based devices.

experimental semiconductorsnitride compound researchhigh-temperature electronicsoptoelectronic devicesintermetallic alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.686	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AuInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control