AuInN3
metalAuInN3 is an intermetallic compound combining gold, indium, and nitrogen, representing an emerging material in the nitride compound family with potential semiconductor or functional alloy properties. This material is primarily of research interest rather than established in high-volume industrial production, with potential applications in optoelectronics, high-temperature electronics, or specialized semiconductor devices where the unique phase stability of gold-indium nitrides could offer advantages over conventional binary nitride systems. Engineers evaluating this compound should treat it as an experimental material requiring validation of manufacturing feasibility, property stability, and cost-effectiveness relative to mature alternatives like GaN or InN-based devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |