AuGaON2

ceramic

· AuGaON2

AuGaON2 is an experimental wide-bandgap semiconductor ceramic compound combining gold, gallium, oxygen, and nitrogen elements. This material belongs to the family of ternary and quaternary nitride-oxide semiconductors under active research for next-generation optoelectronic and high-temperature electronic devices. While not yet in widespread commercial production, materials in this chemical family are being investigated for applications requiring high thermal stability, wide bandgap control, and potential for UV-visible light emission or detection.

experimental semiconductor researchwide-bandgap optoelectronicsUV/visible light emitters or detectorshigh-temperature electronicsadvanced materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.00279	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AuGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental