AuGaN3
metal· AuGaN3
AuGaN3 is a ternary compound combining gold (Au) with gallium nitride (GaN), representing an experimental material in the wide-bandgap semiconductor family rather than a conventional metallic alloy. This compound is primarily of research interest for next-generation optoelectronic and high-power electronic devices, where the unique properties of the Au-GaN system could enable improved contacts, heterostructures, or novel device architectures beyond what conventional GaN or Au-based systems alone can achieve.
wide-bandgap semiconductorsoptoelectronic deviceshigh-power electronicsSchottky contactsmaterials researchnext-generation RF/microwave devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.