AuGaN3 — Properties & Data | MatWorld

AuGaN3

Name: AuGaN3
Brand: MatWorld

metal

· AuGaN3

AuGaN3 is a ternary compound combining gold (Au) with gallium nitride (GaN), representing an experimental material in the wide-bandgap semiconductor family rather than a conventional metallic alloy. This compound is primarily of research interest for next-generation optoelectronic and high-power electronic devices, where the unique properties of the Au-GaN system could enable improved contacts, heterostructures, or novel device architectures beyond what conventional GaN or Au-based systems alone can achieve.

wide-bandgap semiconductorsoptoelectronic deviceshigh-power electronicsSchottky contactsmaterials researchnext-generation RF/microwave devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.376	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AuGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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