AsZnN3 is an experimental ternary nitride ceramic compound combining arsenic, zinc, and nitrogen elements. This material belongs to the family of wide-bandgap semiconductors and advanced ceramics under active research for next-generation optoelectronic and high-temperature applications. While not yet established in mainstream industrial production, nitride-based ceramics in this compositional space are investigated for their potential in high-frequency electronics, UV optics, and extreme-environment structural applications where traditional semiconductors reach their performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.585 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.420 | eV/atom | — |