AsVOFN is an experimental semiconductor compound in the arsenic-vanadium oxide family, likely synthesized for research into novel electronic or optoelectronic device materials. This material family is of interest for potential applications requiring tunable bandgap, mixed-valence properties, or integration with oxide electronics, though it remains primarily a research-phase material without widespread industrial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | 1.625 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9600 | eV/atom | — |