AsTlN3 is an experimental arsenic-thallium nitride ceramic compound, representing a member of the ternary nitride family with potential semiconductor or wide-bandgap applications. This material exists primarily in research contexts rather than established industrial production, and would be investigated for optoelectronic or high-temperature ceramic applications where arsenic and thallium nitride chemistries offer unique electronic or structural properties. Engineers considering this material should recognize it as a laboratory-stage compound requiring validation of synthesis methods, phase stability, and practical manufacturability before integration into production systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.912 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.880 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data