AsTaO2N

ceramic

· AsTaO2N

AsTaO2N is an advanced ceramic compound containing arsenic, tantalum, oxygen, and nitrogen elements, representing a nitride-oxide ceramic in the refractory and electronic materials family. This material is primarily of research and development interest for high-temperature structural applications and semiconductor-related uses, where the combination of tantalum's refractory properties with nitrogen doping offers potential improvements in thermal stability and electronic functionality compared to conventional oxide ceramics.

High-temperature refractory applicationsSemiconductor processing equipmentAdvanced ceramic coatingsResearch and development phaseFunctional ceramic compoundsThermal barrier materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.1686	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsTaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental