AsTaO2N is an advanced ceramic compound containing arsenic, tantalum, oxygen, and nitrogen elements, representing a nitride-oxide ceramic in the refractory and electronic materials family. This material is primarily of research and development interest for high-temperature structural applications and semiconductor-related uses, where the combination of tantalum's refractory properties with nitrogen doping offers potential improvements in thermal stability and electronic functionality compared to conventional oxide ceramics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.1686 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data