AsSiO2N

semiconductor

· AsSiO2N

AsSiO₂N is an experimental oxynitride semiconductor compound combining arsenic, silicon, oxygen, and nitrogen phases, representing an emerging class of wide-bandgap materials under research for advanced optoelectronic and high-temperature applications. While not yet commercialized at production scale, this material family is investigated for potential use in ultraviolet emitters, high-power electronics, and extreme-environment sensors where conventional semiconductors (GaAs, GaN) face thermal or wavelength limitations. Engineers would consider this material primarily in R&D contexts where access to novel bandgap engineering and thermal stability characteristics could enable next-generation device architectures.

UV optoelectronics (research)high-temperature semiconductorswide-bandgap devicesexperimental photonicsextreme-environment sensorsnext-generation power electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8000	eV	—
Magnetic Moment(μB)	3.922e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsSiO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control