AsSbON2

semiconductor

· AsSbON2

AsSbON₂ is an experimental oxynitride semiconductor compound combining arsenic, antimony, oxygen, and nitrogen—a material class under active research for wide-bandgap semiconductor applications. This compound belongs to the family of emerging semiconductors being investigated for high-temperature, high-power, and optoelectronic devices where conventional III-V semiconductors reach performance limits. While not yet in mainstream industrial production, materials in this compositional space are of interest for next-generation power electronics, wide-bandgap optoelectronics, and specialized sensor applications where thermal stability and chemical resistance are critical.

research semiconductorswide-bandgap electronicshigh-temperature devicesexperimental optoelectronicspower semiconductor alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	0.00000240	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsSbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control