Arsenic phosphide (AsP) is a III-V compound semiconductor formed from group 15 elements, belonging to the same materials family as gallium arsenide and indium phosphide. While less commonly commercialized than mainstream III-V semiconductors, AsP is investigated primarily in research contexts for optoelectronic and high-frequency electronic applications where its direct bandgap and carrier transport properties may offer advantages in niche device geometries. The material represents an alternative pathway in III-V semiconductor development, with potential relevance to infrared detectors, heterojunction devices, and integrated photonics where lattice engineering and bandgap tuning are priorities.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,848 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,145.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1405 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.2300 | eV | Measured | ||
| ↳ | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3665 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.3665 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data