AsOsS is a ternary compound semiconductor composed of arsenic, osmium, and sulfur elements. This material represents an understudied composition in the chalcogenide semiconductor family and is primarily of research interest rather than established industrial production. Potential applications lie in emerging optoelectronic and thermoelectric devices where mixed-metal chalcogenides offer tunable bandgap and carrier properties, though practical engineering adoption remains limited pending further characterization and scalable synthesis methods.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 9.711 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.300 | eV | — | ||
| ↳ | 1.158 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3792 | eV/atom | — |