AsNMg3 is an experimental III-V semiconductor compound combining arsenic, nitrogen, and magnesium in a ternary phase. This material family remains primarily in research and development, with potential applications in wide-bandgap optoelectronic and high-temperature electronic devices, though conventional alternatives like GaN and InN currently dominate commercial semiconductor markets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.330 | eV | — |