Arsenic nitride (AsN₃) is an experimental ceramic compound belonging to the family of binary nitride ceramics, synthesized primarily through solid-state reaction or specialized synthesis methods rather than occurring naturally. This material remains largely in the research phase, with limited industrial applications, but is of interest in the nitride ceramics family for its potential as a wide-bandgap semiconductor or advanced ceramic material. Researchers explore AsN₃ in the context of developing novel high-performance ceramics and semiconductors, though its practical engineering adoption has not yet matured compared to more established nitrides like silicon nitride or aluminum nitride.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1245 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6150 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 8.153 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4932 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.4815 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data