AsIrO2S

semiconductor

· AsIrO2S

AsIrO₂S is a mixed-metal oxide-sulfide semiconductor compound containing arsenic, iridium, oxygen, and sulfur. This is an experimental or research-phase material, not yet established in mainstream industrial applications; it belongs to the family of complex transition-metal chalcogenides being investigated for potential optoelectronic and photocatalytic properties. The material's potential relevance lies in advanced semiconductor research where the combination of heavy transition metals (iridium) with chalcogen doping is explored for band-gap engineering, though viable engineering applications remain to be demonstrated compared to established alternatives.

research semiconductorsphotocatalysisoptoelectronic devicesthin-film electronicsmaterials researchnext-generation electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	0.1577	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.180	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsIrO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control