AsInON2

ceramic

· AsInON2

AsInON₂ is an experimental III-V oxynitride ceramic compound combining arsenic, indium, oxygen, and nitrogen—a mixed-anion semiconductor in the broader family of nitride and oxide ceramics. This material remains primarily in research and development, targeted for optoelectronic and high-temperature applications where the combination of covalent bonding and wide bandgap characteristics could enable devices operating in extreme environments or with enhanced thermal stability compared to conventional arsenides or nitrides alone.

research and developmentwide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicscompound semiconductor researchIII-V materials exploration

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.898	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.500	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsInON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental