AsInO3 is an arsenic–indium oxide compound belonging to the family of metal oxides with potential semiconductor or optoelectronic properties. This material is primarily investigated in research settings rather than established in high-volume industrial production, with interest centered on its possible applications in photovoltaic devices, transparent conductors, or specialized optoelectronic components where the combined properties of arsenic and indium oxides might offer advantages in bandgap tuning or carrier mobility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.4000 | eV | — | ||
Magnetic Moment(μB) | 0.00612 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.4730 | eV/atom | — | ||
| ↳ | 0.9000 | eV/atom | — |