AsInO2S is an experimental mixed-metal oxide sulfide ceramic compound containing arsenic, indium, oxygen, and sulfur. This material belongs to the family of quaternary chalcogenides and oxychalcogenides, which are of research interest for semiconducting and photonic applications where combined anionic frameworks (oxygen and sulfur) can tailor electronic and optical properties. While not yet widely commercialized, materials in this compositional space are being investigated for potential use in optoelectronics, photovoltaics, and infrared sensing applications where the band gap engineering afforded by mixed anion systems offers advantages over conventional binary or ternary ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.0000563 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.000 | eV/atom | — |