AsInO2N

ceramic

· AsInO2N

AsInO₂N is an experimental ceramic compound combining arsenic, indium, oxygen, and nitrogen—a quaternary nitride oxide with potential applications in semiconductor and photonic device research. While not yet widely commercialized, materials in this family are investigated for wide-bandgap semiconductor properties, photocatalysis, and optoelectronic applications where conventional oxides or nitrides may have limitations. Engineers considering this material should treat it as an early-stage research compound requiring custom synthesis and characterization for specific high-performance applications.

wide-bandgap semiconductorsphotocatalytic coatingsoptoelectronic devicesresearch and developmentspecialized thin filmsnext-generation electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.6299	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsInO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental