AsInN3

ceramic

· AsInN3

AsInN3 is a ternary ceramic compound combining arsenic, indium, and nitrogen, belonging to the III-V nitride family of semiconductors. This material is primarily of research and development interest rather than established industrial production, with potential applications in high-temperature and wide-bandgap semiconductor devices. Engineers would consider AsInN3 for next-generation optoelectronic and power electronics where the combination of indium's conductivity and nitride stability could offer advantages in extreme environments or high-frequency applications, though the material remains in early-stage investigation relative to more established alternatives like GaN and InN.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronic research devicesnitride compound developmentexperimental power electronicsIII-V semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental