AsGeO2N

semiconductor

· AsGeO2N

AsGeO2N is an experimental oxynitride semiconductor compound combining arsenic, germanium, oxygen, and nitrogen elements. This material belongs to the broader family of wide-bandgap semiconductors and oxynitride compounds, which are primarily investigated in research settings for potential optoelectronic and photonic applications. The incorporation of nitrogen into arsenic-germanium oxides aims to engineer bandgap energy and defect properties for future device technologies, though practical industrial deployment remains limited and the material is not yet mature for widespread commercial use.

experimental semiconductorswide-bandgap electronics researchphotonic device developmentthin-film optoelectronicsmaterials research and characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	0.0000143	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control