AsGaO2N

ceramic

· AsGaO2N

AsGaO₂N is an experimental oxynitride ceramic compound combining arsenic, gallium, oxygen, and nitrogen elements. This material belongs to the family of wide-bandgap semiconductors and oxynitrides, which are primarily investigated in research settings for optoelectronic and high-temperature applications. While not yet established in mainstream industrial production, oxynitride ceramics in this compositional space are being explored for their potential in UV-visible light emission, high-temperature structural applications, and advanced semiconductor device platforms where thermal stability and wide bandgap properties are advantageous.

experimental semiconductor researchwide-bandgap optoelectronicshigh-temperature ceramicsphotoluminescent materialsIII-V semiconductor compoundsnext-generation device development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9814	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental