AsGaO2F

semiconductor

· AsGaO2F

AsGaO2F is an experimental semiconductor compound combining arsenic, gallium, oxygen, and fluorine elements. This material belongs to the family of mixed-anion semiconductors and remains primarily in research phase, with potential applications in optoelectronics and wide-bandgap device development where fluorine incorporation may enable tunable electronic properties or enhanced stability compared to conventional III-V semiconductors.

experimental optoelectronicswide-bandgap semiconductorsresearch photovoltaicshigh-frequency devices (potential)radiation-hardened electronics (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	1.057e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control