AsGaN3

ceramic

· AsGaN3

AsGaN3 is an experimental ceramic compound combining arsenic, gallium, and nitrogen—a member of the III-V nitride family being explored in materials research. While not yet established in mainstream industrial production, this material is of interest in the semiconductor and high-performance ceramic research communities for potential applications requiring wide bandgap properties and thermal stability.

Research and developmentWide-bandgap semiconductorsHigh-temperature ceramicsOptoelectronic device researchThermal management systems (experimental)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.977	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.040	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental