AsBr₃ is an arsenic tribromide compound belonging to the family of layered semiconductor materials with a layered crystal structure similar to other group V-VI pnictogens. This is primarily a research and development material rather than an established commercial compound, explored for potential applications in optoelectronics and low-dimensional semiconductor devices where its layered nature enables exfoliation into thin films. Engineers investigating AsBr₃ are typically interested in it as a candidate for next-generation semiconductors with tunable bandgaps and novel electronic properties that differ from bulk three-dimensional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,473.6 | ksi | — | ||
Exfoliation Energy(Eexf) | 89.15 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 880.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1468 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.600 | eV | — | ||
| ↳ | 2.854 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 5.840 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.01504 | C/m² | — | ||
Seebeck Coefficient(S) | -305.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4316 | eV/atom | — |