AsBOFN
semiconductor· AsBOFN
AsBOFN is an experimental semiconductor compound in the boron-arsenic-oxygen-fluorine family, representing a wide-bandgap material under research for next-generation electronic and optoelectronic applications. The combination of these elements suggests potential for high-temperature stability, radiation hardness, or wide-bandgap device performance—characteristics that make boron-containing semiconductors attractive for power electronics, UV optoelectronics, and harsh-environment sensing. As a research-phase material, it competes with established wide-bandgap platforms like GaN and SiC, though its specific advantages and manufacturability remain under development.
wide-bandgap semiconductorshigh-temperature electronicsUV optoelectronicsradiation-hardened devicespower conversionexperimental research compounds
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.