AsBOFN

semiconductor

· AsBOFN

AsBOFN is an experimental semiconductor compound in the boron-arsenic-oxygen-fluorine family, representing a wide-bandgap material under research for next-generation electronic and optoelectronic applications. The combination of these elements suggests potential for high-temperature stability, radiation hardness, or wide-bandgap device performance—characteristics that make boron-containing semiconductors attractive for power electronics, UV optoelectronics, and harsh-environment sensing. As a research-phase material, it competes with established wide-bandgap platforms like GaN and SiC, though its specific advantages and manufacturability remain under development.

wide-bandgap semiconductorshigh-temperature electronicsUV optoelectronicsradiation-hardened devicespower conversionexperimental research compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	2.780e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.300	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsBOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control