AsBiO₂N is an oxynitride ceramic compound combining arsenic, bismuth, oxygen, and nitrogen elements. This is an experimental/research-stage material investigated for its potential in wide-bandgap semiconductor and photocatalytic applications, where the nitrogen doping of bismuth oxide systems offers possibilities for enhanced optical and electronic properties compared to traditional binary oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.2377 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.780 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data