AsBiO₂N is an oxynitride ceramic compound combining arsenic, bismuth, oxygen, and nitrogen elements. This is an experimental/research-stage material investigated for its potential in wide-bandgap semiconductor and photocatalytic applications, where the nitrogen doping of bismuth oxide systems offers possibilities for enhanced optical and electronic properties compared to traditional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.2377 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.780 | eV/atom | — |