AsBiN3

ceramic

· AsBiN3

AsBiN₃ is an experimental ternary nitride ceramic composed of arsenic, bismuth, and nitrogen. This material remains primarily a research compound within the wide bandgap semiconductor and advanced ceramic family, investigated for potential optoelectronic and high-temperature applications where conventional nitrides may have limitations. While not yet established in mainstream industrial production, ternary nitride ceramics like AsBiN₃ are of interest to researchers exploring alternatives to GaN and AlN for specialized high-frequency, high-power, or radiation-resistant device architectures.

research and developmentwide bandgap semiconductorshigh-temperature ceramicsradiation-resistant electronicsadvanced optoelectronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.155	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.420	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsBiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental