AsBaN3 is an experimental ceramic compound combining arsenic, boron, and nitrogen—a member of the III-V nitride family being explored for advanced semiconductor and refractory applications. While not yet widely commercialized, this material family is of interest to researchers developing wide-bandgap semiconductors, high-temperature ceramics, and potentially hard coatings, with properties that could offer alternatives to established nitrides like GaN or BN in specialized extreme-environment contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.961 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.320 | eV/atom | — |