AsAlN3

metal

· AsAlN3

AsAlN3 is an experimental III-V nitride compound combining arsenic, aluminum, and nitrogen, belonging to the wide-bandgap semiconductor family. This material remains largely in the research phase, with potential applications in high-temperature and high-power electronic devices where conventional nitrides (GaN, AlN) reach performance limits. Its development is driven by interest in extending semiconductor performance into more extreme operating conditions, though industrial adoption and processing techniques are not yet established.

experimental wide-bandgap semiconductorshigh-temperature electronics researchhigh-power device developmentIII-V nitride compoundsadvanced semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.149	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.840	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control