Arsenic is a brittle metalloid element with a gray, crystalline structure, commonly employed in semiconductor and optoelectronic device manufacturing where its electronic properties are exploited in compound semiconductors. It is widely used in gallium arsenide (GaAs) and indium arsenide (InAs) systems for high-frequency and photovoltaic applications, as well as in traditional copper-based alloys for strength enhancement. Engineers select arsenic-containing compounds when high electron mobility, direct bandgap properties, or superior performance in RF/microwave circuits is required, though its toxicity demands rigorous handling protocols and has led to reduced use in consumer electronics compared to earlier decades.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 6,212.4 | ksi | — | ||
| ↳ | 5,012.5 | ksi | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 3.750 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | — | ||
Exfoliation Energy(Eexf) | 134.9 | meV/atom | — | ||
Poisson's Ratio(ν)2 entries | 0.2294 | - | — | ||
| ↳ | 0.2900 | - | — | ||
Shear Modulus(G)2 entries | 4,102.8 | ksi | — | ||
| ↳ | 2,899.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1866 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07700 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -111.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.02549 | eV/atom | — |