As — Properties & Data | MatWorld

As

Name: As
Brand: MatWorld

metal

· As

Arsenic is a brittle metalloid element with a gray, crystalline structure, commonly employed in semiconductor and optoelectronic device manufacturing where its electronic properties are exploited in compound semiconductors. It is widely used in gallium arsenide (GaAs) and indium arsenide (InAs) systems for high-frequency and photovoltaic applications, as well as in traditional copper-based alloys for strength enhancement. Engineers select arsenic-containing compounds when high electron mobility, direct bandgap properties, or superior performance in RF/microwave circuits is required, though its toxicity demands rigorous handling protocols and has led to reduced use in consumer electronics compared to earlier decades.

semiconductor devicesgallium arsenide optoelectronicsphotovoltaic cellsRF and microwave integrated circuitshigh-speed transistorscopper alloy strengthening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	5,012.5	ksi	DFT · OptB88vdW
↳	6,212.4	ksi	DFT · PBE
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	DFT · PBE
Elastic Anisotropy(AU)	3.750	-	DFT · PBE
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	ksi	DFT · PBE
Exfoliation Energy(Eexf)	134.9	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)2 entries	0.2900	-	DFT · OptB88vdW
↳	0.2294	-	DFT · PBE
Shear Modulus(G)2 entries	2,899.3	ksi	DFT · OptB88vdW
↳	4,102.8	ksi	DFT · PBE

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1866	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00103	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00127	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	20.92	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	22.79	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	0.02549	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As

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