As₆Cd₄I₂ is a compound semiconductor combining arsenic, cadmium, and iodine elements. This is a research-phase material rather than a commercially established semiconductor; it belongs to the family of mixed-anion semiconductors that researchers investigate for optoelectronic and photovoltaic applications. The material's potential lies in tunable bandgap properties and possible applications in infrared detection or specialized photonic devices, though engineering adoption remains limited pending further development and characterization of stability and manufacturability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,791.8 | ksi | — | ||
Shear Modulus(G) | 2,926.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8687 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2080 | eV/atom | — |