As₄Te₆ is a compound semiconductor belonging to the arsenic-tellurium family, representing a mixed-valence chalcogenide system. This material is primarily of research and development interest rather than established in high-volume production, with potential applications in optoelectronic and thermoelectric devices where its unique bandgap and thermal properties could be leveraged. The arsenic-tellurium system is notable for tunable electronic properties and has been explored in contexts ranging from infrared sensing to phase-change memory materials, though As₄Te₆ specifically remains an emerging compound requiring further development for practical engineering implementation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.58 | GPa | — | ||
Shear Modulus(G) | 20.43 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.01100 | eV/atom | — |