As₄Nb₂ is a compound semiconductor composed of arsenic and niobium, belonging to the family of binary metal-pnictide materials. This material is primarily of research interest rather than established in widespread industrial production, with potential applications in high-temperature electronics and optoelectronic devices where its semiconductor properties could be leveraged for specialized circuit functions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 126.3 | GPa | — | ||
Shear Modulus(G) | 90.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00740 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5090 | eV/atom | — |