As₄Cd₂ is a compound semiconductor combining arsenic and cadmium elements, belonging to the III-V and II-VI semiconductor material families. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where the arsenic-cadmium combination offers potential for tuning bandgap properties and light absorption characteristics. Engineers consider arsenide-cadmium compounds when designing high-efficiency solar cells, infrared detectors, or specialized light-emitting devices where traditional gallium arsenide (GaAs) or cadmium telluride (CdTe) alternatives may have limitations in performance or cost.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,932 | ksi | — | ||
Shear Modulus(G) | 3,269.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05800 | eV/atom | — |